BFP620E7764BTSA1
RF TRANS NPN 2.8V 65GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP620E7764BTSA1 is an NPN RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 2.8V and a maximum collector current of 80mA, delivering a minimum DC current gain (hFE) of 110 at 50mA and 1.5V. The transistor boasts a transition frequency of 65GHz and a gain of 21.5dB. Power dissipation is rated at 185mW. The noise figure is typically between 0.7dB and 1.3dB across the 1.8GHz to 6GHz frequency range. This device is housed in a PG-SOT343-3D package, suitable for surface mounting, and is supplied on a tape and reel. It is commonly utilized in wireless infrastructure and high-frequency communication systems. The operating junction temperature can reach 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 21.5dB |
| Power - Max | 185mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 2.8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 50mA, 1.5V |
| Frequency - Transition | 65GHz |
| Noise Figure (dB Typ @ f) | 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | PG-SOT343-3D |
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