BFP540FESDE6327
RF TRANS NPN 5V 30GHZ 4TSFPManufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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The Infineon Technologies BFP540FESDE6327 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a 5V collector-emitter breakdown voltage and a maximum collector current of 80mA, this device offers a transition frequency of 30GHz. It provides a typical gain of 20dB, with a minimum DC current gain (hFE) of 50 at 20mA and 3.5V. The noise figure is rated at a typical 0.9dB to 1.4dB at 1.8GHz. This surface mount component, packaged in a 4-TSFP, dissipates a maximum power of 250mW and operates at temperatures up to 150°C. It is supplied on tape and reel. This RF transistor is suitable for use in wireless communications infrastructure and other demanding RF systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 20dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 3.5V |
| Frequency - Transition | 30GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 1.8GHz |
| Supplier Device Package | 4-TSFP |
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