BFP540ESDE6327HTSA1
RF TRANS NPN 5V 30GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP540ESDE6327HTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 5V and a maximum collector current of 80mA, with a power dissipation capability of 250mW. It operates at transition frequencies up to 30GHz, offering a typical gain of 21.5dB. The transistor exhibits a low noise figure, ranging from 0.9dB to 1.4dB at 1.8GHz. Engineered for demanding environments, it supports an operating temperature of up to 150°C (TJ). Supplied in a PG-SOT343-3D package, this surface mount device is presented on tape and reel. Its specifications make it suitable for use in wireless communication systems and other advanced RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 21.5dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 3.5V |
| Frequency - Transition | 30GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 1.8GHz |
| Supplier Device Package | PG-SOT343-3D |