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BFP520E6327BTSA1

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BFP520E6327BTSA1

RF TRANS NPN 3.5V 45GHZ SOT343-4

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFP520E6327BTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a PG-SOT343-3D (SC-82A) package, operates with a collector-emitter breakdown voltage of 3.5V and a maximum collector current of 40mA. It exhibits a transition frequency of 45GHz and provides a typical gain of 24dB. The device offers a low noise figure of 0.95dB at 1.8GHz and a minimum DC current gain (hFE) of 70 at 20mA and 2V. With a maximum power dissipation of 100mW, it is suitable for operation up to 150°C (TJ). This transistor is commonly found in wireless communication systems, radar, and other advanced RF front-end designs. The component is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain24dB
Power - Max100mW
Current - Collector (Ic) (Max)40mA
Voltage - Collector Emitter Breakdown (Max)3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 20mA, 2V
Frequency - Transition45GHz
Noise Figure (dB Typ @ f)0.95dB @ 1.8GHz
Supplier Device PackagePG-SOT343-3D

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