BFP460E6433HTMA1
RF TRANS NPN 5.8V 22GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP460E6433HTMA1 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 5.8V and a maximum collector current of 70mA. With a transition frequency of 22GHz, it offers a gain range of 12.5dB to 26.5dB. The noise figure is typically between 0.7dB and 1.2dB across the 100MHz to 3GHz frequency spectrum. The device is housed in a PG-SOT343-3D (SC-82A, SOT-343) surface mount package and operates at a maximum power dissipation of 230mW. The minimum DC current gain (hFE) is 90 at 20mA collector current and 3V Vce. This RF transistor is suitable for use in wireless communication systems and other RF circuitry requiring efficient amplification at high frequencies. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12.5dB ~ 26.5dB |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 5.8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 20mA, 3V |
| Frequency - Transition | 22GHz |
| Noise Figure (dB Typ @ f) | 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz |
| Supplier Device Package | PG-SOT343-3D |
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