BFP460E6327HTSA1
RF TRANS NPN 5.8V 22GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies NPN RF Transistor, BFP460E6327HTSA1, is designed for high-frequency applications. This surface mount component operates at a collector-emitter breakdown voltage of 5.8V and a maximum collector current of 70mA. It features a transition frequency of 22GHz, with typical gain ranging from 12.5dB to 26.5dB across specified frequencies. The noise figure is notably low, typically between 0.7dB and 1.2dB from 100MHz to 3GHz. This bipolar RF transistor is housed in a PG-SOT343-4-2 package, also known as SC-82A, and is supplied on tape and reel. With a maximum power dissipation of 230mW and an operating junction temperature of 150°C, the BFP460E6327HTSA1 is suitable for demanding wireless infrastructure and high-performance communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12.5dB ~ 26.5dB |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 5.8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 20mA, 3V |
| Frequency - Transition | 22GHz |
| Noise Figure (dB Typ @ f) | 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz |
| Supplier Device Package | PG-SOT343-4-2 |
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