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BFP450E6327BTSA1

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BFP450E6327BTSA1

RF TRANS NPN 5V 24GHZ SOT343-4

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

Quality Control: Learn More

Infineon Technologies BFP450E6327BTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a PG-SOT343-3D package (SC-82A, SOT-343), offers a 5V collector-emitter breakdown voltage and a maximum collector current of 100mA. It operates with a transition frequency of 24GHz and provides a typical gain of 15.5dB. The transistor exhibits a minimum DC current gain (hFE) of 60 at 50mA and 4V, with a low noise figure of 1.25dB at 1.8GHz. Maximum power dissipation is rated at 450mW, and it can operate at junction temperatures up to 150°C. This device is suitable for use in wireless communication systems and other RF front-end circuitry. Supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain15.5dB
Power - Max450mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)5V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 50mA, 4V
Frequency - Transition24GHz
Noise Figure (dB Typ @ f)1.25dB @ 1.8GHz
Supplier Device PackagePG-SOT343-3D

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