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BFP420E6433HTMA1

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BFP420E6433HTMA1

RF TRANS NPN 5V 25GHZ SOT343-4

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFP420E6433HTMA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a PG-SOT343-3D (SC-82A) package, offers a 5V collector-emitter breakdown voltage and a maximum collector current of 35mA. It operates with a maximum power dissipation of 160mW and features a transition frequency of 25GHz. Key performance metrics include a minimum DC current gain (hFE) of 60 at 20mA and 4V, a typical gain of 21dB, and a noise figure of 1.1dB at 1.8GHz. The transistor is supplied on tape and reel for automated assembly and can operate at junction temperatures up to 150°C. This device is suitable for use in demanding RF front-end circuitry within the wireless communications and defense industries.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain21dB
Power - Max160mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)5V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 4V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.1dB @ 1.8GHz
Supplier Device PackagePG-SOT343-3D

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