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BFP420E6327BTSA1

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BFP420E6327BTSA1

RF TRANS NPN 5V 25GHZ SOT343-4

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFP420E6327BTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 5V and a maximum collector current of 35mA. It exhibits a transition frequency of 25GHz and a typical gain of 21dB. The transistor features a low noise figure, rated at 1.1dB at 1.8GHz. With a maximum power dissipation of 160mW, it is suitable for demanding RF circuits. The device is provided in a PG-SOT343-3D package, also known as SC-82A, for surface mounting and is supplied on a tape and reel. The BFP420E6327BTSA1 is utilized in various wireless communication systems and RF front-end designs.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain21dB
Power - Max160mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)5V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 4V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.1dB @ 1.8GHz
Supplier Device PackagePG-SOT343-3D

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