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BFP405E6433HTMA1

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BFP405E6433HTMA1

RF TRANS NPN 5V 25GHZ SOT343-4

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFP405E6433HTMA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a PG-SOT343-3D (SC-82A) package, operates with a collector-emitter breakdown voltage of 5V and a maximum collector current of 25mA. It offers a transition frequency of 25GHz and a typical gain of 23dB. The transistor exhibits a minimum DC current gain (hFE) of 60 at 5mA and 4V. With a noise figure of 1.25dB at 1.8GHz and a maximum power dissipation of 75mW, it is suitable for demanding RF front-end circuitry. The operating temperature range extends to 150°C (TJ). This component is commonly utilized in wireless communication systems and other RF front-end designs. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain23dB
Power - Max75mW
Current - Collector (Ic) (Max)25mA
Voltage - Collector Emitter Breakdown (Max)5V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 4V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.25dB @ 1.8GHz
Supplier Device PackagePG-SOT343-3D

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