BFP196WE6327HTSA1
RF TRANS NPN 12V 7.5GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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The Infineon Technologies BFP196WE6327HTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 150mA. With a transition frequency of 7.5GHz, it offers a typical gain range of 12.5dB to 19dB. The noise figure is specified at 1.3dB to 2.3dB across the 900MHz to 1.8GHz frequency band. This device is rated for a maximum power dissipation of 700mW and operates at an elevated junction temperature up to 150°C. Supplied in a PG-SOT343-3D package (SOT-343), it is presented on a tape and reel for surface mounting. This transistor is commonly utilized in wireless communication systems and RF front-end designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12.5dB ~ 19dB |
| Power - Max | 700mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT343-3D |