BFP193WE6327HTSA1
RF TRANS NPN 12V 8GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP193WE6327HTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, packaged in a PG-SOT343-3D (SC-82A), features a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. It exhibits a transition frequency of 8GHz and offers a gain range of 13.5dB to 20.5dB. The noise figure is typically between 1dB and 1.6dB at frequencies of 900MHz to 1.8GHz. With a maximum power dissipation of 580mW and an operating junction temperature of 150°C, this component is suitable for use in wireless infrastructure and high-frequency communication systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB ~ 20.5dB |
| Power - Max | 580mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT343-3D |
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