BFP182WE6327HTSA1
RF TRANS NPN 12V 8GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP182WE6327HTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 35mA. With an impressive transition frequency of 8GHz and a gain of 22dB, it is well-suited for demanding RF amplification stages. The noise figure is typically between 0.9dB and 1.3dB across the 900MHz to 1.8GHz range. It is supplied in a PG-SOT343-3D package for surface mounting, offering a maximum power dissipation of 250mW. The operating temperature range extends to 150°C (TJ). This device finds application in wireless communication systems, radar, and other high-frequency circuitry. It is provided on a tape and reel (TR) for efficient assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 22dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT343-3D |
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