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BFP 740FESD E6327

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BFP 740FESD E6327

RF TRANS NPN 4.7V 47GHZ 4TSFP

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFP-740FESD-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, supplied in a 4-TSFP package, operates up to 47GHz with a collector-emitter breakdown voltage of 4.7V. It features a maximum collector current of 45mA and a power dissipation of 160mW. The transistor offers a DC current gain (hFE) of 160 at 25mA and 3V, with a gain ranging from 9dB to 31dB across its operational frequencies. Noise figure performance is typically 0.5dB to 1.45dB from 150MHz to 10GHz. The BFP-740FESD-E6327 is suitable for use in demanding wireless infrastructure and communication systems. It is provided on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9dB ~ 31dB
Power - Max160mW
Current - Collector (Ic) (Max)45mA
Voltage - Collector Emitter Breakdown (Max)4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 25mA, 3V
Frequency - Transition47GHz
Noise Figure (dB Typ @ f)0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package4-TSFP

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