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BFP 740F E6327

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BFP 740F E6327

RF TRANS NPN 4.7V 42GHZ 4TSFP

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies NPN RF Transistor, part number BFP-740F-E6327, is a high-performance component designed for demanding RF applications. This transistor operates with a collector-emitter breakdown voltage of 4.7V and a maximum collector current (Ic) of 30mA. It exhibits a typical gain of 27.5dB and a transition frequency up to 42GHz. The noise figure is exceptionally low, ranging from 0.5dB to 0.75dB across the 1.8GHz to 6GHz frequency band. With a maximum power dissipation of 160mW, it is suitable for operation in environments up to 150°C (TJ). The BFP-740F-E6327 is supplied in a 4-TSFP surface mount package, delivered on tape and reel. This component is widely utilized in wireless infrastructure, satellite communications, and high-frequency test and measurement equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain27.5dB
Power - Max160mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 25mA, 3V
Frequency - Transition42GHz
Noise Figure (dB Typ @ f)0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
Supplier Device Package4-TSFP

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