BFP 650F E6327
RF TRANS NPN 4.5V 42GHZ 4TSFPManufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP-650F-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component offers a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 150mA. The device boasts a transition frequency of 42GHz, with typical gain ranging from 11dB to 21.5dB across its operational spectrum. Noise figures are exceptionally low, typically between 0.8dB and 1.9dB at frequencies from 1.8GHz to 6GHz. With a maximum power dissipation of 500mW and a minimum DC current gain (hFE) of 110 at 80mA and 3V, the BFP-650F-E6327 is suitable for demanding applications in wireless infrastructure, satellite communications, and radar systems. It is supplied in a 4-TSFP package on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 11dB ~ 21.5dB |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA, 3V |
| Frequency - Transition | 42GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | 4-TSFP |
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