BFP 620F E7764
RF TRANS NPN 2.8V 65GHZ 4TSFPManufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP-620F-E7764 is a high-frequency NPN bipolar RF transistor designed for demanding applications. This component features a transition frequency of 65GHz and a maximum collector current of 80mA, delivering a typical gain of 21dB. With a low noise figure, ranging from 0.7dB to 1.3dB across the 1.8GHz to 6GHz spectrum, it is suitable for sensitive RF front-end designs. The transistor operates with a collector-emitter breakdown voltage of 2.8V and a maximum power dissipation of 185mW. Its robust construction includes a minimum DC current gain (hFE) of 110 at 50mA and 1.5V, and it is rated for operation up to 150°C (TJ). Packaged in a 4-TSFP (4-SMD, Flat Leads) format and supplied on tape and reel, the BFP-620F-E7764 is well-suited for use in wireless infrastructure, satellite communications, and advanced radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 21dB |
| Power - Max | 185mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 2.8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 50mA, 1.5V |
| Frequency - Transition | 65GHz |
| Noise Figure (dB Typ @ f) | 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | 4-TSFP |
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