BFP 540F E6327
RF TRANS NPN 5V 30GHZ 4TSFPManufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP-540F-E6327 is an NPN RF bipolar transistor designed for high-frequency applications. This component operates at a collector-emitter breakdown voltage of 5V and a maximum collector current of 80mA, delivering a typical gain of 20dB at 1.8GHz. With a transition frequency of 30GHz and a noise figure as low as 0.9dB at 1.8GHz, it is suitable for demanding RF front-end designs. The transistor offers a maximum power dissipation of 250mW and can operate at junction temperatures up to 150°C. Packaged in a compact 4-TSFP (4-SMD, Flat Leads) configuration, it is supplied on tape and reel for automated assembly. This device finds application in cellular infrastructure, wireless communications, and other high-frequency electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 20dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 3.5V |
| Frequency - Transition | 30GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 1.8GHz |
| Supplier Device Package | 4-TSFP |