BFP 520F E6327
RF TRANS NPN 3.5V 45GHZ 4TSFPManufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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The Infineon Technologies BFP-520F-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This device operates with a collector-emitter breakdown voltage of 3.5V and a maximum collector current of 40mA. It exhibits a transition frequency (fT) of 45GHz, making it suitable for advanced wireless infrastructure and high-speed data communication systems. The transistor offers a typical gain of 22.5dB and a low noise figure of 0.95dB at 1.8GHz. With a maximum power dissipation of 100mW, it is packaged in a 4-TSFP surface-mount configuration, supplied on tape and reel. The BFP-520F-E6327 is employed in various demanding sectors, including telecommunications and satellite communications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 22.5dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 40mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 20mA, 2V |
| Frequency - Transition | 45GHz |
| Noise Figure (dB Typ @ f) | 0.95dB @ 1.8GHz |
| Supplier Device Package | 4-TSFP |
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