BFP 420F E6327
RF TRANS NPN 5V 25GHZ 4TSFPManufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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The Infineon Technologies BFP-420F-E6327 is an NPN bipolar RF transistor designed for high-frequency amplification and switching applications. This component operates with a collector-emitter breakdown voltage of 5V and a maximum collector current of 35mA. It features a transition frequency of 25GHz, enabling operation in demanding wireless infrastructure and high-frequency communication systems. The transistor offers a typical gain of 19.5dB at 1.8GHz and a low noise figure of 1.1dB at the same frequency, making it suitable for sensitive receiver front-ends. With a maximum power dissipation of 160mW and an operating junction temperature of 150°C, it is housed in a compact 4-TSFP surface-mount package, supplied on tape and reel. The BFP-420F-E6327 is utilized in applications across cellular base stations, satellite communication, and microwave point-to-point links.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 19.5dB |
| Power - Max | 160mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 4V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
| Supplier Device Package | 4-TSFP |
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