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BFP 405F E6327

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BFP 405F E6327

RF TRANS NPN 5V 25GHZ 4TSFP

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFP-405F-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a 5V collector-emitter breakdown voltage and a maximum collector current of 12mA. With a transition frequency of 25GHz, it is suitable for demanding RF designs. The device exhibits a minimum DC current gain (hFE) of 60 at 5mA, 4V and delivers a gain of 22.5dB. The typical noise figure is 1.25dB at 1.8GHz. Operating at temperatures up to 150°C (TJ), the BFP-405F-E6327 features a maximum power dissipation of 55mW. It is supplied in a 4-TSFP surface mount package, presented on tape and reel. This transistor is commonly utilized in wireless communications infrastructure and high-frequency test and measurement equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain22.5dB
Power - Max55mW
Current - Collector (Ic) (Max)12mA
Voltage - Collector Emitter Breakdown (Max)5V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 4V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.25dB @ 1.8GHz
Supplier Device Package4-TSFP

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