BFP 196R E6327
RF TRANS NPN 12V 7.5GHZ SOT143-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies NPN RF Transistor, BFP-196R-E6327, offers robust performance for high-frequency applications. This bipolar RF transistor features a collector-emitter breakdown voltage of 12V and a maximum collector current of 150mA. With a transition frequency of 7.5GHz and a power dissipation of 700mW, it is well-suited for demanding RF designs. The device exhibits a minimum DC current gain (hFE) of 70 at 50mA and 8V, with a typical gain range of 10.5dB to 16.5dB. Noise figure specifications range from 1.3dB to 2.3dB across 900MHz to 1.8GHz. The BFP-196R-E6327 is housed in a PG-SOT-143-3D (TO-253-4, TO-253AA) surface-mount package, supplied on tape and reel. This component finds application in telecommunications infrastructure, wireless communication systems, and other advanced RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10.5dB ~ 16.5dB |
| Power - Max | 700mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT-143-3D |
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