BFG135AE6327XT
RF TRANS NPN 15V 6GHZ SOT223-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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The Infineon Technologies BFG135AE6327XT is an NPN RF bipolar transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 150mA, with a power dissipation capability of 1W. It operates at transition frequencies up to 6GHz, offering a gain range of 9dB to 14dB. The noise figure is specified between 1.5dB and 2.6dB across a frequency range of 900MHz to 1.8GHz. This device utilizes a surface mount mounting type and is supplied in a PG-SOT223-4 package, presented on a tape and reel. The BFG135AE6327XT is suitable for use in wireless communication systems and other RF circuit designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 9dB ~ 14dB |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 8V |
| Frequency - Transition | 6GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT223-4 |
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