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BFG 235 E6327

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BFG 235 E6327

RF TRANS NPN 15V 5.5GHZ SOT223-4

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

Quality Control: Learn More

Infineon Technologies BFG-235-E6327 is an NPN bipolar RF transistor designed for demanding applications. This device operates at a collector-emitter breakdown voltage of 15V and a maximum collector current of 300mA. With a transition frequency of 5.5GHz and a power dissipation capability of 2W, it is suitable for high-frequency amplification stages. The minimum DC current gain (hFE) is 75 at 200mA and 8V, and it offers a typical gain of 12.5dB with a noise figure of 1.7dB at 900MHz. Packaged in a PG-SOT223-4 (TO-261-4) surface mount configuration and supplied on tape and reel, this component is utilized in wireless communications infrastructure and broadband amplifiers. The operating junction temperature reaches 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain12.5dB
Power - Max2W
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 200mA, 8V
Frequency - Transition5.5GHz
Noise Figure (dB Typ @ f)1.7dB @ 900MHz
Supplier Device PackagePG-SOT223-4

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