BFG 19S E6327
RF TRANS NPN 15V 5.5GHZ SOT223-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFG-19S-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This device boasts a transition frequency of 5.5GHz and a maximum collector current of 210mA, with a power dissipation capability of 1W. It features a typical DC current gain (hFE) of 70 at 70mA and 8V, and provides a gain range of 14dB to 8.5dB. The noise figure is rated at 2dB to 3dB across the 900MHz to 1.8GHz frequency range. Housed in a PG-SOT223-4 package (TO-261-4, TO-261AA), this surface mount component operates up to a junction temperature of 150°C. The BFG-19S-E6327 is suitable for use in wireless communication systems, radar, and other RF front-end designs. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB ~ 8.5dB |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 210mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 70mA, 8V |
| Frequency - Transition | 5.5GHz |
| Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT223-4 |