BFG 196 E6327
RF TRANS NPN 12V 7.5GHZ SOT223-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFG-196-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 150mA, with a power dissipation capability of 800mW. It operates up to a transition frequency of 7.5GHz and offers a gain range of 9dB to 14.5dB. The noise figure is specified between 1.3dB and 2.3dB across a frequency range of 900MHz to 1.8GHz. The dc current gain (hFE) is a minimum of 70 at 50mA and 8V. This device is housed in a PG-SOT223-4 (TO-261-4, TO-261AA) package for surface mounting and is supplied on tape and reel. Its performance characteristics make it suitable for use in wireless infrastructure and communication systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB ~ 14.5dB |
| Power - Max | 800mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT223-4 |