BFG 193 E6433
RF TRANS NPN 12V 8GHZ SOT223-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFG-193-E6433 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. It features a transition frequency of 8GHz and provides a gain range of 10.5dB to 16dB. The typical noise figure is between 1dB and 1.6dB at frequencies from 900MHz to 1.8GHz. With a maximum power dissipation of 600mW and an operating junction temperature of up to 150°C, it is suitable for demanding environments. The transistor is housed in a PG-SOT223-4 (TO-261-4, TO-261AA) surface-mount package, supplied on tape and reel. This device is utilized in wireless communication systems and advanced electronic circuitry.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10.5dB ~ 16dB |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT223-4 |
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