BF799WH6327XTSA1
RF TRANS NPN 20V 800MHZ SOT323-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies NPN RF Transistor, part number BF799WH6327XTSA1, is engineered for high-frequency applications. This device features a 20V collector-emitter breakdown voltage and a maximum collector current of 35mA. With a transition frequency of 800MHz and a maximum power dissipation of 280mW, it is suitable for demanding RF circuitry. The NPN transistor exhibits a minimum DC current gain (hFE) of 40 at 20mA and 10V. It boasts a typical noise figure of 3dB at 100MHz. The BF799WH6327XTSA1 is supplied in a PG-SOT323 surface mount package, commonly known as SC-70, and is provided on tape and reel for automated assembly. This component finds application in wireless communication modules and radio frequency front-end circuits. Its operating temperature range extends up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 800MHz |
| Noise Figure (dB Typ @ f) | 3dB @ 100MHz |
| Supplier Device Package | PG-SOT323 |
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