BF799WE6327BTSA1
RF TRANS NPN 20V 800MHZ SOT323-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BF799WE6327BTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in a PG-SOT323 package, operates with a collector-emitter breakdown voltage of 20V and a maximum collector current of 35mA. It features a transition frequency of 800MHz and a power dissipation of 280mW. The device offers a minimum DC current gain (hFE) of 40 at 20mA and 10V, with a typical noise figure of 3dB at 100MHz. Operating temperature ranges up to 150°C (TJ). The BF799WE6327BTSA1 is commonly utilized in mobile communications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 800MHz |
| Noise Figure (dB Typ @ f) | 3dB @ 100MHz |
| Supplier Device Package | PG-SOT323 |
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