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BF776E6327FTSA1

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BF776E6327FTSA1

RF TRANS NPN 4.7V 46GHZ SOT343-4

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

Quality Control: Learn More

Infineon Technologies BF776E6327FTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This device offers a collector-emitter breakdown voltage of 4.7V and a maximum collector current of 50mA. Featuring a transition frequency of 46GHz, it is suitable for demanding RF signal amplification and switching. The BF776E6327FTSA1 exhibits a minimum DC current gain (hFE) of 180 at 30mA and 3V, with a typical gain of 24dB. Noise figure is rated at 0.8dB to 1.3dB across the 1.8GHz to 6GHz range. With a maximum power dissipation of 200mW, it is housed in a PG-SOT343-3D (SC-82A, SOT-343) surface mount package and is supplied on tape and reel. This component finds application in wireless communications infrastructure and high-frequency test and measurement equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain24dB
Power - Max200mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 30mA, 3V
Frequency - Transition46GHz
Noise Figure (dB Typ @ f)0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device PackagePG-SOT343-3D

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