BF776E6327FTSA1
RF TRANS NPN 4.7V 46GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BF776E6327FTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This device offers a collector-emitter breakdown voltage of 4.7V and a maximum collector current of 50mA. Featuring a transition frequency of 46GHz, it is suitable for demanding RF signal amplification and switching. The BF776E6327FTSA1 exhibits a minimum DC current gain (hFE) of 180 at 30mA and 3V, with a typical gain of 24dB. Noise figure is rated at 0.8dB to 1.3dB across the 1.8GHz to 6GHz range. With a maximum power dissipation of 200mW, it is housed in a PG-SOT343-3D (SC-82A, SOT-343) surface mount package and is supplied on tape and reel. This component finds application in wireless communications infrastructure and high-frequency test and measurement equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 24dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 30mA, 3V |
| Frequency - Transition | 46GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | PG-SOT343-3D |