BF517E6327HTSA1
TRANS NPN 15V 0.025A SOT23Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BF517E6327HTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA. With a transition frequency of 2.5GHz and a gain of 13dB, it is suitable for demanding RF circuitry. The device exhibits a minimum DC current gain (hFE) of 40 at 2mA and 1V, and a typical noise figure of 3.5dB at 800MHz. Rated for a maximum power dissipation of 280mW, the BF517E6327HTSA1 operates reliably up to 150°C. It is supplied in a PG-SOT23 surface mount package, commonly found in telecommunications and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA, 1V |
| Frequency - Transition | 2.5GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 800MHz |
| Supplier Device Package | PG-SOT23 |
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