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BF 770A E6327

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BF 770A E6327

RF TRANS NPN 12V 6GHZ SOT23-3

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BF-770A-E6327 is an NPN bipolar RF transistor engineered for high-frequency applications. This SOT-23-3 packaged component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 90mA. It features a transition frequency of 6GHz and delivers a gain ranging from 9.5dB to 14.5dB. The device exhibits a typical noise figure between 1.5dB and 2.6dB across its specified operating frequencies of 900MHz to 1.8GHz. With a maximum power dissipation of 300mW and a minimum DC current gain (hFE) of 70 at 30mA and 8V, the BF-770A-E6327 is suitable for use in wireless communication systems, radio frequency identification (RFID) readers, and other general-purpose RF amplification circuits. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9.5dB ~ 14.5dB
Power - Max300mW
Current - Collector (Ic) (Max)90mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 30mA, 8V
Frequency - Transition6GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device PackagePG-SOT23

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