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GS66502B-MR

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GS66502B-MR

GS66502B-MR

Manufacturer: Infineon Technologies Canada Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 650 V 7.5A (Tc) Surface Mount

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Rds On (Max) @ Id, Vgs260mOhm @ 2.25A, 6V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id2.6V @ 1.75mA
Supplier Device Package-
Grade-
Drive Voltage (Max Rds On, Min Rds On)6V
Vgs (Max)+7V, -10V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 400 V
Qualification-

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