IDT, Integrated Device Technology Inc. 71V3O58XS133PFG is a 256K x 18 synchronous Static Random Access Memory (SRAM) device operating at 3.3V. This high-performance memory is designed for applications requiring rapid data access and efficient operation. With its synchronous architecture, data is clocked in and out, enhancing system timing and performance. The 256K word depth and 18-bit word width provide substantial storage capacity for critical data buffering and temporary storage needs. This component is commonly utilized in high-speed networking equipment, telecommunications infrastructure, and industrial control systems where low latency and reliable data integrity are paramount. Packaged in a tray for efficient handling during manufacturing processes.
Additional Information
Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray