6116LA25TBD
IC SRAM 16KBIT PARALLEL 24CDIPManufacturer: IDT, Integrated Device Technology Inc
Categories: Memory
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IDT, Integrated Device Technology Inc's 6116LA25TBD is an asynchronous SRAM device featuring a 16Kbit memory size organized as 2K x 8. This component offers a fast 25 ns access time and a 25 ns write cycle time, ensuring efficient data handling. The parallel memory interface simplifies integration into existing designs. Operating within a voltage range of 4.5V to 5.5V, the 6116LA25TBD is designed for robust performance across an industrial temperature range of -55°C to 125°C. It is supplied in a 24-CDIP through-hole package, ideal for applications requiring high reliability and extended operational life. This memory component is commonly utilized in industrial control systems, telecommunications infrastructure, and aerospace and defense applications where consistent, fast memory access is critical.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 24-CDIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Memory Size | 16Kbit |
| Memory Type | Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 24-CDIP |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 2K x 8 |
| Programmable | Not Verified |
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