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HGTP3N60A4

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HGTP3N60A4

IGBT 600V 17A TO220-3

Manufacturer: Harris Corporation

Categories: Single IGBTs

Quality Control: Learn More

Harris Corporation HGTP3N60A4 is a 600V, 17A Insulated Gate Bipolar Transistor (IGBT) in a TO-220-3 package. This through-hole component offers a maximum collector current of 17A and a pulsed collector current of 40A. Key electrical characteristics include a gate charge of 21 nC and a maximum on-state voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 3A collector current. Switching performance is rated at 6ns turn-on and 73ns turn-off at 25°C, with switching energy of 37µJ (on) and 25µJ (off), tested under 390V, 3A, 50 Ohm, 15V conditions. The device supports a maximum power dissipation of 70W and operates across a wide temperature range from -55°C to 150°C (TJ). This IGBT is suitable for applications in power supply, industrial motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C6ns/73ns
Switching Energy37µJ (on), 25µJ (off)
Test Condition390V, 3A, 50Ohm, 15V
Gate Charge21 nC
Current - Collector (Ic) (Max)17 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)40 A
Power - Max70 W

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