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RFP70N03

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RFP70N03

MOSFET N-CH 30V 70A TO220-3

Manufacturer: Harris Corporation

Categories: Single FETs, MOSFETs

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The Harris Corporation RFP70N03 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 70A at 25°C (Tc). With a low on-resistance of 10mOhm at 70A and 10V, the RFP70N03 minimizes conduction losses. The input capacitance (Ciss) is 3300 pF at 25V, and the gate charge (Qg) is a maximum of 260 nC at 20V, facilitating faster switching speeds. The device is housed in a standard TO-220-3 package for through-hole mounting. This MOSFET is utilized in various industrial applications, including power supplies, motor control, and automotive electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 70A, 10V
FET Feature-
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220-3
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V

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