RFP70N03
MOSFET N-CH 30V 70A TO220-3Manufacturer: Harris Corporation
Categories: Single FETs, MOSFETs
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The Harris Corporation RFP70N03 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 70A at 25°C (Tc). With a low on-resistance of 10mOhm at 70A and 10V, the RFP70N03 minimizes conduction losses. The input capacitance (Ciss) is 3300 pF at 25V, and the gate charge (Qg) is a maximum of 260 nC at 20V, facilitating faster switching speeds. The device is housed in a standard TO-220-3 package for through-hole mounting. This MOSFET is utilized in various industrial applications, including power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 70A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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