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RFL1N12

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RFL1N12

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 120 V 1A (Tc) 8.33W (Tc) Through Hole TO-205AF (TO-39)

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Rds On (Max) @ Id, Vgs1.9Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)8.33W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-205AF (TO-39)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V

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