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RFD7N10LE

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RFD7N10LE

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 7A (Tc) 47W (Tc) Through Hole TO-220-3

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 7A, 5V
FET Feature-
Power Dissipation (Max)47W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+10V, -8V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 25 V

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