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RF1S50N06

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RF1S50N06

50A, 60V, 0.022 OHM, N-CHANNEL

Manufacturer: Harris Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 60 V 50A (Tc) 131W (Tc) Through Hole I2PAK (TO-262)

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)131W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageI2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2020 pF @ 25 V

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