Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

RF1S4N100SM9A

Banner
productimage

RF1S4N100SM9A

MOSFET N-CH 1000V 4.3A TO263AB

Manufacturer: Harris Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 1000 V 4.3A (Tc) 150W (Tc) Surface Mount TO-263AB

Additional Information

Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Rds On (Max) @ Id, Vgs3.5Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263AB
Vgs (Max)±20V
Drain to Source Voltage (Vdss)1000 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
RF1S15N08L

LOGIC LEVEL GATE (5V) DEVICE

product image
RFP8N20

N-CHANNEL POWER MOSFET

product image
RFP10P15

P-CHANNEL POWER MOSFET