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HUF76139S3

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HUF76139S3

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 30 V 75A (Tc) 200W (Tc) Through Hole I2PAK (TO-262)

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)200W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageI2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V

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