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BUZ21

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BUZ21

MOSFET N-CH 100V 21A TO220AB

Manufacturer: Harris Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Harris Corporation BUZ21 is an N-Channel SIPMOS® Power MOSFET designed for demanding applications. This through-hole component, housed in a TO-220AB package, offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 21A at 25°C (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 85mOhm at 13A and 10V, and an input capacitance (Ciss) of 1300 pF at 25 V. The threshold voltage (Vgs(th)) is rated at a maximum of 4V for 1mA. This MOSFET is suitable for various industrial power switching and control applications.

Additional Information

Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs85mOhm @ 13A, 10V
FET Feature-
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V

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