2N1700
NPN TRANSISTORManufacturer: Harris Corporation
Categories: Single Bipolar Transistors
Quality Control: Learn More
Harris Corporation 2N1700 is an NPN bipolar junction transistor (BJT) housed in a TO-39 metal can package. This through-hole component features a collector-emitter breakdown voltage of 40V and a maximum collector cutoff current of 75µA. The DC current gain (hFE) is a minimum of 20 at 100mA collector current and 4V Vce. The saturation voltage (Vce(sat)) is a maximum of 1V at 10µA base current and 200µA collector current. This transistor is suitable for applications in general-purpose amplification and switching across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10µA, 200µA |
| Current - Collector Cutoff (Max) | 75µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | - |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Qualification | - |