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GT180N12M

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GT180N12M

MOSFET N-CH 120V 55A 96W TO-263

Manufacturer: Goford Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 120 V 55A (Tc) 96W (Tc) Surface Mount TO-263

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:
Technical Details:
PackagingDigi-Reel®
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id3.7V @ 250µA
Supplier Device PackageTO-263
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1635 pF @ 60 V

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