GT080N10TI
N100V,65A,RD<8M@10V,VTH1.0V~2.5VManufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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Goford Semiconductor GT080N10TI is an N-Channel MOSFET with a drain-source voltage (Vdss) of 100V. This through-hole component, housed in a TO-220 package, offers a continuous drain current (Id) of 65A at 25°C and a maximum power dissipation of 100W at the same temperature. The Rds On is specified at a maximum of 8mOhm at 20A and 10V gate-source voltage. Key parameters include a typical gate charge (Qg) of 35 nC at 10V and an input capacitance (Ciss) of 2328 pF at 50V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power supply units, industrial motor control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2328 pF @ 50 V |
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