GT080N08D5
N85V,65A,RD<8.5M@10V,VTH2.0V~4.0Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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The Goford Semiconductor GT080N08D5 is an N-channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 85 V and a continuous drain current (Id) of 65 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 8 mOhm at 20 A and 10 V drive voltage, it offers efficient power handling. The GT080N08D5 is packaged in an 8-DFN (4.9x5.75) surface mount configuration, supporting a maximum power dissipation of 69 W (Tc). Key parameters include a gate charge (Qg) of 39 nC at 10 V and input capacitance (Ciss) of 1885 pF at 50 V. Operating temperature ranges from -55°C to 150°C. This component is suitable for use in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1885 pF @ 50 V |
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