GT040N04D5I
N40V,110A,RD<3.5M@10V,VTH1.0V~2.Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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Goford Semiconductor GT040N04D5I is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 110A at 25°C. With a maximum on-resistance (Rds(on)) of 3.5mOhm at 10A and 10V, it offers low conduction losses. The GT040N04D5I supports drive voltages from 4.5V to 10V and has a gate charge (Qg) of 50nC typical at 10V. Its input capacitance (Ciss) is rated at 2298pF maximum at 20V. Packaged in an 8-DFN (4.9x5.75) surface mount, it dissipates up to 160W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial power supplies, and battery management systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2298 pF @ 20 V |
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