GT025N06D5
MOSFET N-CH 60V 170A DFN5*6-8LManufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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The Goford Semiconductor SGT series GT025N06D5 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a low on-resistance of 2.5mOhm at 20A and 10V Vgs, enabling minimal conduction losses. It offers a continuous drain current capability of 170A (Tc) with a maximum power dissipation of 125W (Tc), suitable for demanding thermal environments. The device operates with a drive voltage range from 4.5V to 10V and has a threshold voltage of 2.5V at 250µA. Housed in an 8-DFN (4.9x5.75) surface mount package, it supports a maximum gate-source voltage of ±20V and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems. The GT025N06D5 is supplied in tape and reel packaging.
Additional Information
Series: SGTRoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
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