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GT025N06AM6

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GT025N06AM6

N60V,170A,RD<2.0M@10V,VTH1.2V~2.

Manufacturer: Goford Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 60 V 170A (Tc) 215W (Tc) Surface Mount TO-263-6

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)215W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263-6
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5058 pF @ 30 V

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